A simplified approach is used to determine the relative importance of slow (>3 s) and fast (<3 s) charged trap contributions to threshold voltage shifts (Δ Vth) induced by negative bias temperature instability in HfSiON gate dielectric p -channel field effect transistors. For the devices under study the relative importance of the two components is approximately the same. Total trap density induced threshold voltage shifts from measurements at 368, 398, and 428 K can be fitted to a simplified law of the form Δ V th =A e-EA /kT tα with EA =0.085±0.012 eV and α=0.186±0.003. The importance of ignoring fast trap effects in overestimating reliability lifetimes is discussed.
Bibliographical noteFunding Information:
We gratefully acknowledge Dr. Gennadi Bersuker of SEMATECH for permitting us to represent his data in the format shown in Fig. . This work was partially supported by the Air Force Research Laboratory, Kirtland AFB under Contract No. FA9453-06-C-0367. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the United States National Nuclear Security Administration, Department of Energy under Contract No. DEAC04-94AL85000.
ASJC Scopus subject areas
- Physics and Astronomy(all)