A simplified approach to estimating total trap contributions in negative bias temperature instability

R. A.B. Devine; J. K. Mee; H. P. Hjalmarson; M. A. Quevedo-Lopez; H. N. Alshareef

doi:10.1063/1.3160330

A simplified approach to estimating total trap contributions in negative bias temperature instability

R. A.B. Devine, J. K. Mee, H. P. Hjalmarson, M. A. Quevedo-Lopez, H. N. Alshareef

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A simplified approach is used to determine the relative importance of slow (>3 s) and fast (<3 s) charged trap contributions to threshold voltage shifts (Δ V_th) induced by negative bias temperature instability in HfSiON gate dielectric p -channel field effect transistors. For the devices under study the relative importance of the two components is approximately the same. Total trap density induced threshold voltage shifts from measurements at 368, 398, and 428 K can be fitted to a simplified law of the form Δ V _th =A e^-E^A /k^T t^α with E_A =0.085±0.012 eV and α=0.186±0.003. The importance of ignoring fast trap effects in overestimating reliability lifetimes is discussed.

Original language	English (US)
Article number	024508
Journal	Journal of Applied Physics
Volume	106
Issue number	2
DOIs	https://doi.org/10.1063/1.3160330
State	Published - 2009

Bibliographical note

Funding Information:
We gratefully acknowledge Dr. Gennadi Bersuker of SEMATECH for permitting us to represent his data in the format shown in Fig. . This work was partially supported by the Air Force Research Laboratory, Kirtland AFB under Contract No. FA9453-06-C-0367. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the United States National Nuclear Security Administration, Department of Energy under Contract No. DEAC04-94AL85000.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3160330

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title = "A simplified approach to estimating total trap contributions in negative bias temperature instability",

abstract = "A simplified approach is used to determine the relative importance of slow (>3 s) and fast (<3 s) charged trap contributions to threshold voltage shifts (Δ Vth) induced by negative bias temperature instability in HfSiON gate dielectric p -channel field effect transistors. For the devices under study the relative importance of the two components is approximately the same. Total trap density induced threshold voltage shifts from measurements at 368, 398, and 428 K can be fitted to a simplified law of the form Δ V th =A e-EA /kT tα with EA =0.085±0.012 eV and α=0.186±0.003. The importance of ignoring fast trap effects in overestimating reliability lifetimes is discussed.",

author = "Devine, {R. A.B.} and Mee, {J. K.} and Hjalmarson, {H. P.} and Quevedo-Lopez, {M. A.} and Alshareef, {H. N.}",

note = "Funding Information: We gratefully acknowledge Dr. Gennadi Bersuker of SEMATECH for permitting us to represent his data in the format shown in Fig. . This work was partially supported by the Air Force Research Laboratory, Kirtland AFB under Contract No. FA9453-06-C-0367. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the United States National Nuclear Security Administration, Department of Energy under Contract No. DEAC04-94AL85000.",

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doi = "10.1063/1.3160330",

language = "English (US)",

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journal = "Journal of Applied Physics",

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T1 - A simplified approach to estimating total trap contributions in negative bias temperature instability

AU - Devine, R. A.B.

AU - Mee, J. K.

AU - Hjalmarson, H. P.

AU - Quevedo-Lopez, M. A.

AU - Alshareef, H. N.

N1 - Funding Information: We gratefully acknowledge Dr. Gennadi Bersuker of SEMATECH for permitting us to represent his data in the format shown in Fig. . This work was partially supported by the Air Force Research Laboratory, Kirtland AFB under Contract No. FA9453-06-C-0367. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Co., for the United States National Nuclear Security Administration, Department of Energy under Contract No. DEAC04-94AL85000.

PY - 2009

Y1 - 2009

N2 - A simplified approach is used to determine the relative importance of slow (>3 s) and fast (<3 s) charged trap contributions to threshold voltage shifts (Δ Vth) induced by negative bias temperature instability in HfSiON gate dielectric p -channel field effect transistors. For the devices under study the relative importance of the two components is approximately the same. Total trap density induced threshold voltage shifts from measurements at 368, 398, and 428 K can be fitted to a simplified law of the form Δ V th =A e-EA /kT tα with EA =0.085±0.012 eV and α=0.186±0.003. The importance of ignoring fast trap effects in overestimating reliability lifetimes is discussed.

AB - A simplified approach is used to determine the relative importance of slow (>3 s) and fast (<3 s) charged trap contributions to threshold voltage shifts (Δ Vth) induced by negative bias temperature instability in HfSiON gate dielectric p -channel field effect transistors. For the devices under study the relative importance of the two components is approximately the same. Total trap density induced threshold voltage shifts from measurements at 368, 398, and 428 K can be fitted to a simplified law of the form Δ V th =A e-EA /kT tα with EA =0.085±0.012 eV and α=0.186±0.003. The importance of ignoring fast trap effects in overestimating reliability lifetimes is discussed.

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M1 - 024508

ER -

A simplified approach to estimating total trap contributions in negative bias temperature instability

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