A semiconductor device including monolithically integrated pmos and nmos transistors

Aftab M. Hussain (Inventor)

Research output: Patent


A method for producing a semiconductor device involves forming a first transistor having a silicon substrate and a gate, and forming a second transistor, having a germanium substrate, on top of the first transistor. The second transistor is formed by forming a first gate (414) of the second transistor on top of, and electrically coupled to, the gate (406) of the first transistor, bonding the germanium substrate to the first gate of the second transistor so that the bonding does not damage the first transistor, and forming a second gate (422) of the second transistor on the germanium substrate.
Original languageEnglish (US)
Patent numberWO2018029594A
StatePublished - Feb 15 2018

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