A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

Tahani H. Flemban; Mohammed Haque; Idris A. Ajia; Norah M. Alwadai; Somak Mitra; Tao Wu; Iman S. Roqan

doi:10.1021/acsami.7b09645

A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

Tahani H. Flemban, Mohammed Haque, Idris A. Ajia, Norah M. Alwadai, Somak Mitra, Tao Wu, Iman S. Roqan

Research output: Contribution to journal › Article › peer-review

98 Scopus citations

Abstract

Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

Original language	English (US)
Pages (from-to)	37120-37127
Number of pages	8
Journal	ACS Applied Materials & Interfaces
Volume	9
Issue number	42
DOIs	https://doi.org/10.1021/acsami.7b09645
State	Published - Oct 16 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: Tahani Flemban is grateful for a scholarship from Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia. The authors wish to thank Ms. Ecaterina Ware from Imperial College London, UK, for TEM sample preparation and Dr. M. A. Roldan from KAUST core lab for HR-TEM measurements. The authors thank KAUST for the financial support.

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10.1021/acsami.7b09645

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title = "A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity",

abstract = "Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.",

author = "Flemban, {Tahani H.} and Mohammed Haque and Ajia, {Idris A.} and Alwadai, {Norah M.} and Somak Mitra and Tao Wu and Roqan, {Iman S.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Tahani Flemban is grateful for a scholarship from Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia. The authors wish to thank Ms. Ecaterina Ware from Imperial College London, UK, for TEM sample preparation and Dr. M. A. Roldan from KAUST core lab for HR-TEM measurements. The authors thank KAUST for the financial support.",

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doi = "10.1021/acsami.7b09645",

language = "English (US)",

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AU - Flemban, Tahani H.

AU - Haque, Mohammed

AU - Ajia, Idris A.

AU - Alwadai, Norah M.

AU - Mitra, Somak

AU - Wu, Tao

AU - Roqan, Iman S.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: Tahani Flemban is grateful for a scholarship from Imam Abdulrahman Bin Faisal University, Dammam, Saudi Arabia. The authors wish to thank Ms. Ecaterina Ware from Imperial College London, UK, for TEM sample preparation and Dr. M. A. Roldan from KAUST core lab for HR-TEM measurements. The authors thank KAUST for the financial support.

PY - 2017/10/16

Y1 - 2017/10/16

N2 - Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

AB - Enhanced ultraviolet (UV) photodetectors (PDs) with high responsivity comparable to that of visible and infrared photodetectors are needed for commercial applications. n-Type ZnO nanotubes (NTs) with high-quality optical, structural, and electrical properties on a p-type Si(100) substrate are successfully fabricated by pulsed laser deposition (PLD) to produce a UV PD with high responsivity, for the first time. We measure the current–voltage characteristics of the device under dark and illuminated conditions and demonstrated the high stability and responsivity (that reaches ∼101.2 A W–1) of the fabricated UV PD. Time-resolved spectroscopy is employed to identify exciton confinement, indicating that the high PD performance is due to optical confinement, the high surface-to-volume ratio, the high structural quality of the NTs, and the high photoinduced carrier density. The superior detectivity and responsivity of our NT-based PD clearly demonstrate that fabrication of high-performance UV detection devices for commercial applications is possible.

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A Photodetector Based on p-Si/n-ZnO Nanotube Heterojunctions with High Ultraviolet Responsivity

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