A novel design and characterization of oxide confined 850 nm VCSEL

S. M. Mitani; M. S. Alias; K. A. Sharif; S. A. Mohamad; P. K. Choudhury

doi:10.1109/NUSOD.2006.306742

A novel design and characterization of oxide confined 850 nm VCSEL

S. M. Mitani, M. S. Alias, K. A. Sharif, S. A. Mohamad, P. K. Choudhury

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The present communication reports an investigation of a new kind of VCSEL with the operating wavelength at 850 nm of the electromagnetic spectrum. The efficacy of the device lies in that the oxide layer is introduced in order to achieve a better confinement of light in the central portion of the device. Further, the introduction of the low-doped DBR layers near the spacers, and the barrier reduction layers in the DBRs finally present much better efficiency of the device. Simulations have been performed for the analyses of several features of the proposed VCSEL in respect of the different controlling parameters for the device, e.g. the intensity, power and current distributions, gain response, output intensity profile, slope efficiency etc.

Original language	English (US)
Title of host publication	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages	63-64
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2006.306742
State	Published - 2006
Externally published	Yes
Event	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 - Nanyang, Singapore Duration: Sep 11 2006 → Sep 14 2006

Publication series

Name	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06

Other

Other	2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Country/Territory	Singapore
City	Nanyang
Period	09/11/06 → 09/14/06

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/NUSOD.2006.306742

Cite this

Mitani, S. M., Alias, M. S., Sharif, K. A., Mohamad, S. A., & Choudhury, P. K. (2006). A novel design and characterization of oxide confined 850 nm VCSEL. In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 (pp. 63-64). Article 4098782 (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06). https://doi.org/10.1109/NUSOD.2006.306742

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title = "A novel design and characterization of oxide confined 850 nm VCSEL",

abstract = "The present communication reports an investigation of a new kind of VCSEL with the operating wavelength at 850 nm of the electromagnetic spectrum. The efficacy of the device lies in that the oxide layer is introduced in order to achieve a better confinement of light in the central portion of the device. Further, the introduction of the low-doped DBR layers near the spacers, and the barrier reduction layers in the DBRs finally present much better efficiency of the device. Simulations have been performed for the analyses of several features of the proposed VCSEL in respect of the different controlling parameters for the device, e.g. the intensity, power and current distributions, gain response, output intensity profile, slope efficiency etc.",

author = "Mitani, {S. M.} and Alias, {M. S.} and Sharif, {K. A.} and Mohamad, {S. A.} and Choudhury, {P. K.}",

year = "2006",

doi = "10.1109/NUSOD.2006.306742",

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booktitle = "2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06",

note = "2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06 ; Conference date: 11-09-2006 Through 14-09-2006",

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Mitani, SM, Alias, MS, Sharif, KA, Mohamad, SA & Choudhury, PK 2006, A novel design and characterization of oxide confined 850 nm VCSEL. in 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06., 4098782, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, pp. 63-64, 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06, Nanyang, Singapore, 09/11/06. https://doi.org/10.1109/NUSOD.2006.306742

A novel design and characterization of oxide confined 850 nm VCSEL. / Mitani, S. M.; Alias, M. S.; Sharif, K. A. et al.
2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06. 2006. p. 63-64 4098782 (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The present communication reports an investigation of a new kind of VCSEL with the operating wavelength at 850 nm of the electromagnetic spectrum. The efficacy of the device lies in that the oxide layer is introduced in order to achieve a better confinement of light in the central portion of the device. Further, the introduction of the low-doped DBR layers near the spacers, and the barrier reduction layers in the DBRs finally present much better efficiency of the device. Simulations have been performed for the analyses of several features of the proposed VCSEL in respect of the different controlling parameters for the device, e.g. the intensity, power and current distributions, gain response, output intensity profile, slope efficiency etc.

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Mitani SM, Alias MS, Sharif KA, Mohamad SA, Choudhury PK. A novel design and characterization of oxide confined 850 nm VCSEL. In 2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06. 2006. p. 63-64. 4098782. (2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06). doi: 10.1109/NUSOD.2006.306742

A novel design and characterization of oxide confined 850 nm VCSEL

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