TY - JOUR
T1 - A Novel Alkylated Indacenodithieno[3,2-b]thiophene-Based Polymer for High-Performance Field-Effect Transistors
AU - Zhang, Weimin
AU - Han, Yang
AU - Zhu, Xiuxiu
AU - Fei, Zhuping
AU - Feng, Yu
AU - Treat, Neil D.
AU - Faber, Hendrik
AU - Stingelin, Natalie
AU - McCulloch, Iain
AU - Anthopoulos, Thomas D.
AU - Heeney, Martin
N1 - Generated from Scopus record by KAUST IRTS on 2023-02-14
PY - 2016/5/25
Y1 - 2016/5/25
N2 - A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p-type semiconductor, affording a mobility of 6.6 cm2 V-1 s-1 in top-gated field-effect transistors with pentafluorobenzenethiol-modified Au electrodes. Electrode treatment with solution-deposited copper(I) thiocyanate (CuSCN) has a beneficial hole-injection/electron-blocking effect, further enhancing the mobility to 8.7 cm2 V-1 s-1.
AB - A novel rigid donor monomer, indacenodithieno[3,2-b]thiophene (IDTT), containing linear alkyl chains, is reported. Its copolymer with benzothiadiazole is an excellent p-type semiconductor, affording a mobility of 6.6 cm2 V-1 s-1 in top-gated field-effect transistors with pentafluorobenzenethiol-modified Au electrodes. Electrode treatment with solution-deposited copper(I) thiocyanate (CuSCN) has a beneficial hole-injection/electron-blocking effect, further enhancing the mobility to 8.7 cm2 V-1 s-1.
UR - https://onlinelibrary.wiley.com/doi/10.1002/adma.201504092
UR - http://www.scopus.com/inward/record.url?scp=84949293530&partnerID=8YFLogxK
U2 - 10.1002/adma.201504092
DO - 10.1002/adma.201504092
M3 - Article
C2 - 26514111
SN - 1521-4095
VL - 28
SP - 3922
EP - 3927
JO - Advanced Materials
JF - Advanced Materials
IS - 20
ER -