A InGaN/GaN quantum dot green (λ=524 nm) laser

Meng Zhang; Animesh Banerjee; Chi-Sen Lee; John M. Hinckley; Pallab Bhattacharya

doi:10.1063/1.3596436

A InGaN/GaN quantum dot green (λ=524 nm) laser

Meng Zhang, Animesh Banerjee, Chi-Sen Lee, John M. Hinckley, Pallab Bhattacharya

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Abstract

The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. © 2011 American Institute of Physics.

Original language	English (US)
Pages (from-to)	221104
Journal	Applied Physics Letters
Volume	98
Issue number	22
DOIs	https://doi.org/10.1063/1.3596436
State	Published - Jun 3 2011
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): N012509-00
Acknowledgements: The work was supported by KAUST under Grant No. N012509-00.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1063/1.3596436

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@article{d3fa86a796394bbe8540d59600ea2605,

title = "A InGaN/GaN quantum dot green (λ=524 nm) laser",

abstract = "The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. {\textcopyright} 2011 American Institute of Physics.",

author = "Meng Zhang and Animesh Banerjee and Chi-Sen Lee and Hinckley, {John M.} and Pallab Bhattacharya",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): N012509-00 Acknowledgements: The work was supported by KAUST under Grant No. N012509-00. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2011",

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doi = "10.1063/1.3596436",

language = "English (US)",

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T1 - A InGaN/GaN quantum dot green (λ=524 nm) laser

AU - Zhang, Meng

AU - Banerjee, Animesh

AU - Lee, Chi-Sen

AU - Hinckley, John M.

AU - Bhattacharya, Pallab

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): N012509-00 Acknowledgements: The work was supported by KAUST under Grant No. N012509-00. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2011/6/3

Y1 - 2011/6/3

N2 - The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. © 2011 American Institute of Physics.

AB - The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/ cm2 at 278 K. The slope and wall plug efficiencies are 0.74 W/A and ∼1.1%, respectively, at 1.3 kA/ cm 2. The value of T0 =233 K in the temperature range of 260-300 K. © 2011 American Institute of Physics.

UR - http://hdl.handle.net/10754/597293

UR - http://aip.scitation.org/doi/10.1063/1.3596436

UR - http://www.scopus.com/inward/record.url?scp=79958806254&partnerID=8YFLogxK

U2 - 10.1063/1.3596436

DO - 10.1063/1.3596436

M3 - Article

SN - 0003-6951

VL - 98

SP - 221104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

A InGaN/GaN quantum dot green (λ=524 nm) laser

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