A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure

Nur 'Adnin Akmar Zulkifli; Kwangwook Park; Jung-Wook Min; Boon S. Ooi; Rozalina Zakaria; Jongmin Kim; Chee Leong Tan

doi:10.1063/5.0018076

A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure

Nur 'Adnin Akmar Zulkifli, Kwangwook Park, Jung-Wook Min, Boon S. Ooi, Rozalina Zakaria, Jongmin Kim, Chee Leong Tan

Research output: Contribution to journal › Article › peer-review

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Abstract

In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma-assisted molecular beam epitaxy. We report a highly sensitive, self-powered, and hybrid GaN NR/graphene/Si (111) PD with a relatively large 100 mm2 active area, a high responsivity of 17.4 A/W, a high specific detectivity of 1.23 1013 Jones, and fast response speeds of 13.2/13.7 ls (20 kHz) under a UV light of 355 nm at zero bias voltage. The results show that the thin graphene acts as a perfect interface for GaN NRs, encouraging growth with minimum defects on the Si substrate. Our results suggest that the GaN NR/graphene/Si (111) heterojunction has a range of interesting properties that make it well-suited for a variety of photodetection applications.

Original language	English (US)
Pages (from-to)	191103
Journal	Applied Physics Letters
Volume	117
Issue number	19
DOIs	https://doi.org/10.1063/5.0018076
State	Published - Nov 13 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-11-16
Acknowledgements: The authors extend special thanks to Dr. Mohammad Khaled Shakfa and Ram Chandra Subedi of the Photonics Laboratory, King Abdullah University of Science and Technology, Saudi Arabia, for their useful discussions and PL measurement. The authors declare that they have no competing financial interest. R. Zakaria and N. A. A. Zulkifli would like to acknowledge support from the University of Malaya (No. IIRG03–2019). K. Park would like to acknowledge support from the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIT) (No. NRF2020R1F1A1070471).

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@article{70d48cbe8dea4c42ad14e042f6fb8387,

title = "A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure",

abstract = "In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma-assisted molecular beam epitaxy. We report a highly sensitive, self-powered, and hybrid GaN NR/graphene/Si (111) PD with a relatively large 100 mm2 active area, a high responsivity of 17.4 A/W, a high specific detectivity of 1.23 1013 Jones, and fast response speeds of 13.2/13.7 ls (20 kHz) under a UV light of 355 nm at zero bias voltage. The results show that the thin graphene acts as a perfect interface for GaN NRs, encouraging growth with minimum defects on the Si substrate. Our results suggest that the GaN NR/graphene/Si (111) heterojunction has a range of interesting properties that make it well-suited for a variety of photodetection applications.",

author = "Zulkifli, {Nur 'Adnin Akmar} and Kwangwook Park and Jung-Wook Min and Ooi, {Boon S.} and Rozalina Zakaria and Jongmin Kim and Tan, {Chee Leong}",

note = "KAUST Repository Item: Exported on 2020-11-16 Acknowledgements: The authors extend special thanks to Dr. Mohammad Khaled Shakfa and Ram Chandra Subedi of the Photonics Laboratory, King Abdullah University of Science and Technology, Saudi Arabia, for their useful discussions and PL measurement. The authors declare that they have no competing financial interest. R. Zakaria and N. A. A. Zulkifli would like to acknowledge support from the University of Malaya (No. IIRG03–2019). K. Park would like to acknowledge support from the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIT) (No. NRF2020R1F1A1070471).",

year = "2020",

month = nov,

day = "13",

doi = "10.1063/5.0018076",

language = "English (US)",

volume = "117",

pages = "191103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure

AU - Zulkifli, Nur 'Adnin Akmar

AU - Park, Kwangwook

AU - Min, Jung-Wook

AU - Ooi, Boon S.

AU - Zakaria, Rozalina

AU - Kim, Jongmin

AU - Tan, Chee Leong

N1 - KAUST Repository Item: Exported on 2020-11-16 Acknowledgements: The authors extend special thanks to Dr. Mohammad Khaled Shakfa and Ram Chandra Subedi of the Photonics Laboratory, King Abdullah University of Science and Technology, Saudi Arabia, for their useful discussions and PL measurement. The authors declare that they have no competing financial interest. R. Zakaria and N. A. A. Zulkifli would like to acknowledge support from the University of Malaya (No. IIRG03–2019). K. Park would like to acknowledge support from the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIT) (No. NRF2020R1F1A1070471).

PY - 2020/11/13

Y1 - 2020/11/13

N2 - In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma-assisted molecular beam epitaxy. We report a highly sensitive, self-powered, and hybrid GaN NR/graphene/Si (111) PD with a relatively large 100 mm2 active area, a high responsivity of 17.4 A/W, a high specific detectivity of 1.23 1013 Jones, and fast response speeds of 13.2/13.7 ls (20 kHz) under a UV light of 355 nm at zero bias voltage. The results show that the thin graphene acts as a perfect interface for GaN NRs, encouraging growth with minimum defects on the Si substrate. Our results suggest that the GaN NR/graphene/Si (111) heterojunction has a range of interesting properties that make it well-suited for a variety of photodetection applications.

AB - In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma-assisted molecular beam epitaxy. We report a highly sensitive, self-powered, and hybrid GaN NR/graphene/Si (111) PD with a relatively large 100 mm2 active area, a high responsivity of 17.4 A/W, a high specific detectivity of 1.23 1013 Jones, and fast response speeds of 13.2/13.7 ls (20 kHz) under a UV light of 355 nm at zero bias voltage. The results show that the thin graphene acts as a perfect interface for GaN NRs, encouraging growth with minimum defects on the Si substrate. Our results suggest that the GaN NR/graphene/Si (111) heterojunction has a range of interesting properties that make it well-suited for a variety of photodetection applications.

UR - http://hdl.handle.net/10754/665951

UR - http://aip.scitation.org/doi/10.1063/5.0018076

U2 - 10.1063/5.0018076

DO - 10.1063/5.0018076

M3 - Article

SN - 0003-6951

VL - 117

SP - 191103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

A highly sensitive, large area, and self-powered UV photodetector based on coalesced gallium nitride nanorods/graphene/silicon (111) heterostructure

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