TY - JOUR
T1 - A Highly Conductive Titanium Oxynitride Electron-Selective Contact for Efficient Photovoltaic Devices.
AU - Yang, Xinbo
AU - Lin, Yuanbao
AU - Liu, Jiang
AU - Liu, Wenzhu
AU - Bi, Qunyu
AU - Song, Xin
AU - Kang, Jingxuan
AU - Xu, Fuzong
AU - Xu, Lujia
AU - Hedhili, Mohamed N.
AU - Baran, Derya
AU - Zhang, Xiaohong
AU - Anthopoulos, Thomas D.
AU - De Wolf, Stefaan
N1 - KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-CRG URF/1/3383
Acknowledgements: X.Y. and Y.L. contributed equally to this work. The work presented in this publication was supported by King Abdullah University of Science & Technology (KAUST), through the Competitive Research Grant no. OSR-CRG URF/1/3383. The authors also thank Heno Hwang, scientific illustrator at KAUST, for producing Figure2a.
PY - 2020/7/3
Y1 - 2020/7/3
N2 - High-quality carrier-selective contacts with suitable electronic properties are a prerequisite for photovoltaic devices with high power conversion efficiency (PCE). In this work, an efficient electron-selective contact, titanium oxynitride (TiOx Ny ), is developed for crystalline silicon (c-Si) and organic photovoltaic devices. Atomic-layer-deposited TiOx Ny is demonstrated to be highly conductive with a proper work function (4.3 eV) and a wide bandgap (3.4 eV). Thin TiOx Ny films simultaneously provide a moderate surface passivation and enable a low contact resistivity on c-Si surfaces. By implementation of an optimal TiOx Ny -based contact, a state-of-the-art PCE of 22.3% is achieved for a c-Si solar cell featuring a full-area dopant-free electron-selective contact. Simultaneously, conductive TiOx Ny is proven to be an efficient electron-transport layer for organic photovoltaic (OPV) devices. A remarkably high PCE of 17.02% is achieved for an OPV device with an electron-transport TiOx Ny layer, which is superior to conventional ZnO-based devices with a PCE of 16.10%. Atomic-layer-deposited TiOx Ny ETL on a large area with a high uniformity may help accelerate the commercialization of emerging solar technologies.
AB - High-quality carrier-selective contacts with suitable electronic properties are a prerequisite for photovoltaic devices with high power conversion efficiency (PCE). In this work, an efficient electron-selective contact, titanium oxynitride (TiOx Ny ), is developed for crystalline silicon (c-Si) and organic photovoltaic devices. Atomic-layer-deposited TiOx Ny is demonstrated to be highly conductive with a proper work function (4.3 eV) and a wide bandgap (3.4 eV). Thin TiOx Ny films simultaneously provide a moderate surface passivation and enable a low contact resistivity on c-Si surfaces. By implementation of an optimal TiOx Ny -based contact, a state-of-the-art PCE of 22.3% is achieved for a c-Si solar cell featuring a full-area dopant-free electron-selective contact. Simultaneously, conductive TiOx Ny is proven to be an efficient electron-transport layer for organic photovoltaic (OPV) devices. A remarkably high PCE of 17.02% is achieved for an OPV device with an electron-transport TiOx Ny layer, which is superior to conventional ZnO-based devices with a PCE of 16.10%. Atomic-layer-deposited TiOx Ny ETL on a large area with a high uniformity may help accelerate the commercialization of emerging solar technologies.
UR - http://hdl.handle.net/10754/664004
UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202002608
UR - http://www.scopus.com/inward/record.url?scp=85087301229&partnerID=8YFLogxK
U2 - 10.1002/adma.202002608
DO - 10.1002/adma.202002608
M3 - Article
C2 - 32613655
SN - 0935-9648
SP - 2002608
JO - Advanced materials (Deerfield Beach, Fla.)
JF - Advanced materials (Deerfield Beach, Fla.)
ER -
