High-quality carrier-selective contacts with suitable electronic properties are a prerequisite for photovoltaic devices with high power conversion efficiency (PCE). In this work, an efficient electron-selective contact, titanium oxynitride (TiOx Ny ), is developed for crystalline silicon (c-Si) and organic photovoltaic devices. Atomic-layer-deposited TiOx Ny is demonstrated to be highly conductive with a proper work function (4.3 eV) and a wide bandgap (3.4 eV). Thin TiOx Ny films simultaneously provide a moderate surface passivation and enable a low contact resistivity on c-Si surfaces. By implementation of an optimal TiOx Ny -based contact, a state-of-the-art PCE of 22.3% is achieved for a c-Si solar cell featuring a full-area dopant-free electron-selective contact. Simultaneously, conductive TiOx Ny is proven to be an efficient electron-transport layer for organic photovoltaic (OPV) devices. A remarkably high PCE of 17.02% is achieved for an OPV device with an electron-transport TiOx Ny layer, which is superior to conventional ZnO-based devices with a PCE of 16.10%. Atomic-layer-deposited TiOx Ny ETL on a large area with a high uniformity may help accelerate the commercialization of emerging solar technologies.
KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): OSR-CRG URF/1/3383
Acknowledgements: X.Y. and Y.L. contributed equally to this work. The work presented in this publication was supported by King Abdullah University of Science & Technology (KAUST), through the Competitive Research Grant no. OSR-CRG URF/1/3383. The authors also thank Heno Hwang, scientiﬁc illustrator at KAUST, for producing Figure2a.