Here, we introduce and give an overview of a general lithography-free method to fabricate silicide and germanide micro-/nanostructures on Si and Ge surfaces through metal-vapor-initiated endoepitaxial growth. Excellent controls on shape and orientation are achieved by adjusting the substrate orientation and growth parameters. Furthermore, micro-/nanoscale pits with controlled morphologies can also be successfully fabricated on Si and Ge surfaces by taking advantage of the sublimation of silicides/germanides. The aim of this brief report is to illustrate the concept of lithography-free synthesis and patterning on surfaces of elemental semiconductors, and the differences and the challenges associated with the Si and the Ge surfaces will be discussed. Our results suggest that this low-cost bottom-up approach is promising for applications in functional nanodevices.
|Original language||English (US)|
|Journal||Nanoscale Research Letters|
|State||Published - 2012|
Bibliographical noteFunding Information:
We acknowledge the support from Singapore National Research Foundation, and we thank Diana Chanh and Doriane Djomani for being our experimental assistants.
- Lithography-free patterning
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics