A future way of storing information: Resistive random access memory

Yanfeng Ji, Jianchen Hu, Mario Lanza

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Electronic information storage has become one of the major needs of modern societies, and it represents a market of more than US$5 billion [1]. Among all of the existing technologies, flash memory is the most widespread because of its simple structure, high integration, and fast speed [2]. The core cell of this device is based on the charge and discharge of a capacitor using a transistor as a tiny switch [3], but, as the devices are scaled down, this configuration presents some physical limitations [4]. Therefore, new ways for information storage are required, and, among all existing nonvolatile memories, one that has raised major expectations in recent years is resistive random access memory (RRAM) [5]. In this article, we present the working principle and functioning of the most promising RRAM devices for future information storage.
Original languageEnglish (US)
Pages (from-to)12-17
Number of pages6
JournalIEEE Nanotechnology Magazine
Issue number1
StatePublished - Mar 1 2015
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

  • Mechanical Engineering
  • Electrical and Electronic Engineering


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