A Donor-Supply Electrode (DSE) for Colloidal Quantum Dot Photovoltaics

Ghada I. Koleilat; Xihua Wang; Andre J. Labelle; Alexander H. Ip; Graham H. Carey; Armin Fischer; Larissa Levina; Lukasz Brzozowski; Edward H. Sargent

doi:10.1021/nl202337a

A Donor-Supply Electrode (DSE) for Colloidal Quantum Dot Photovoltaics

Ghada I. Koleilat, Xihua Wang, Andre J. Labelle, Alexander H. Ip, Graham H. Carey, Armin Fischer, Larissa Levina, Lukasz Brzozowski, Edward H. Sargent

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The highest-performing colloidal quantum dot (CQD) photovoltaics (PV) reported to date have relied on high-temperature (>500°C) annealing of electron-accepting TiO 2. Room-temperature processing reduces energy payback time and manufacturing cost, enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low-thermal-budget larger-bandgap front cell. Here we report an electrode strategy that enables a depleted-heterojunction CQD PV device to be fabricated entirely at room temperature. We find that simply replacing the high-temperature-processed TiO 2 with a sputtered version of the same material leads to poor performance due to the low mobility of the sputtered oxide. We develop instead a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO 2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells having 4% solar power conversion efficiency and high fill factor. These 1 eV bandgap cells are suitable for use as the back junction in tandem solar cells. The DSE concept, combined with control over TiO 2 stoichiometry in sputtering, provides a much-needed tunable electrode to pair with quantum-size-effect CQD films. © 2011 American Chemical Society.

Original language	English (US)
Pages (from-to)	5173-5178
Number of pages	6
Journal	Nano Letters
Volume	11
Issue number	12
DOIs	https://doi.org/10.1021/nl202337a
State	Published - Dec 14 2011
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: This publication is based in part on work supported by an award (no. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, and by Angstrom Engineering and Innovative Technology. The authors would also like to acknowledge the assistance of Ratan Debnath, Huan Liu, Elenita Palmiano, Remigiusz Wolowiec, and Damir Kopilovic as well as the assistance of Mark T. Greiner with UPS/XPS measurement. G.I.K. acknowledges NSERC support in the form of Alexander Graham Bell Canada Graduate Scholarship.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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10.1021/nl202337a

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title = "A Donor-Supply Electrode (DSE) for Colloidal Quantum Dot Photovoltaics",

abstract = "The highest-performing colloidal quantum dot (CQD) photovoltaics (PV) reported to date have relied on high-temperature (>500°C) annealing of electron-accepting TiO 2. Room-temperature processing reduces energy payback time and manufacturing cost, enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low-thermal-budget larger-bandgap front cell. Here we report an electrode strategy that enables a depleted-heterojunction CQD PV device to be fabricated entirely at room temperature. We find that simply replacing the high-temperature-processed TiO 2 with a sputtered version of the same material leads to poor performance due to the low mobility of the sputtered oxide. We develop instead a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO 2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells having 4% solar power conversion efficiency and high fill factor. These 1 eV bandgap cells are suitable for use as the back junction in tandem solar cells. The DSE concept, combined with control over TiO 2 stoichiometry in sputtering, provides a much-needed tunable electrode to pair with quantum-size-effect CQD films. {\textcopyright} 2011 American Chemical Society.",

author = "Koleilat, {Ghada I.} and Xihua Wang and Labelle, {Andre J.} and Ip, {Alexander H.} and Carey, {Graham H.} and Armin Fischer and Larissa Levina and Lukasz Brzozowski and Sargent, {Edward H.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-11-009-21 Acknowledgements: This publication is based in part on work supported by an award (no. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, and by Angstrom Engineering and Innovative Technology. The authors would also like to acknowledge the assistance of Ratan Debnath, Huan Liu, Elenita Palmiano, Remigiusz Wolowiec, and Damir Kopilovic as well as the assistance of Mark T. Greiner with UPS/XPS measurement. G.I.K. acknowledges NSERC support in the form of Alexander Graham Bell Canada Graduate Scholarship. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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month = dec,

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doi = "10.1021/nl202337a",

language = "English (US)",

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T1 - A Donor-Supply Electrode (DSE) for Colloidal Quantum Dot Photovoltaics

AU - Koleilat, Ghada I.

AU - Wang, Xihua

AU - Labelle, Andre J.

AU - Ip, Alexander H.

AU - Carey, Graham H.

AU - Fischer, Armin

AU - Levina, Larissa

AU - Brzozowski, Lukasz

AU - Sargent, Edward H.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-11-009-21 Acknowledgements: This publication is based in part on work supported by an award (no. KUS-11-009-21) made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, by the Natural Sciences and Engineering Research Council (NSERC) of Canada, and by Angstrom Engineering and Innovative Technology. The authors would also like to acknowledge the assistance of Ratan Debnath, Huan Liu, Elenita Palmiano, Remigiusz Wolowiec, and Damir Kopilovic as well as the assistance of Mark T. Greiner with UPS/XPS measurement. G.I.K. acknowledges NSERC support in the form of Alexander Graham Bell Canada Graduate Scholarship. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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Y1 - 2011/12/14

N2 - The highest-performing colloidal quantum dot (CQD) photovoltaics (PV) reported to date have relied on high-temperature (>500°C) annealing of electron-accepting TiO 2. Room-temperature processing reduces energy payback time and manufacturing cost, enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low-thermal-budget larger-bandgap front cell. Here we report an electrode strategy that enables a depleted-heterojunction CQD PV device to be fabricated entirely at room temperature. We find that simply replacing the high-temperature-processed TiO 2 with a sputtered version of the same material leads to poor performance due to the low mobility of the sputtered oxide. We develop instead a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO 2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells having 4% solar power conversion efficiency and high fill factor. These 1 eV bandgap cells are suitable for use as the back junction in tandem solar cells. The DSE concept, combined with control over TiO 2 stoichiometry in sputtering, provides a much-needed tunable electrode to pair with quantum-size-effect CQD films. © 2011 American Chemical Society.

AB - The highest-performing colloidal quantum dot (CQD) photovoltaics (PV) reported to date have relied on high-temperature (>500°C) annealing of electron-accepting TiO 2. Room-temperature processing reduces energy payback time and manufacturing cost, enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low-thermal-budget larger-bandgap front cell. Here we report an electrode strategy that enables a depleted-heterojunction CQD PV device to be fabricated entirely at room temperature. We find that simply replacing the high-temperature-processed TiO 2 with a sputtered version of the same material leads to poor performance due to the low mobility of the sputtered oxide. We develop instead a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO 2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells having 4% solar power conversion efficiency and high fill factor. These 1 eV bandgap cells are suitable for use as the back junction in tandem solar cells. The DSE concept, combined with control over TiO 2 stoichiometry in sputtering, provides a much-needed tunable electrode to pair with quantum-size-effect CQD films. © 2011 American Chemical Society.

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UR - https://pubs.acs.org/doi/10.1021/nl202337a

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JO - Nano Letters

JF - Nano Letters

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ER -

A Donor-Supply Electrode (DSE) for Colloidal Quantum Dot Photovoltaics

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