A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

Qian Wu; Albin Bayerl; Marc Porti; Javier Martin-Martinez; Mario Lanza; Rosana Rodriguez; Vikas Velayudhan; Montserrat Nafria; Xavier Aymerich; Mireia Bargallo Gonzalez; Eddy Simoen

doi:10.1109/TED.2014.2341315

A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

Qian Wu, Albin Bayerl, Marc Porti, Javier Martin-Martinez, Mario Lanza, Rosana Rodriguez, Vikas Velayudhan, Montserrat Nafria, Xavier Aymerich, Mireia Bargallo Gonzalez, Eddy Simoen

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.

Original language	English (US)
Pages (from-to)	3118-3124
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	9
DOIs	https://doi.org/10.1109/TED.2014.2341315
State	Published - Jan 1 2014
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2014.2341315

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abstract = "This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. {\textcopyright} 2014 IEEE.",

author = "Qian Wu and Albin Bayerl and Marc Porti and Javier Martin-Martinez and Mario Lanza and Rosana Rodriguez and Vikas Velayudhan and Montserrat Nafria and Xavier Aymerich and Gonzalez, {Mireia Bargallo} and Eddy Simoen",

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AU - Wu, Qian

AU - Bayerl, Albin

AU - Porti, Marc

AU - Martin-Martinez, Javier

AU - Lanza, Mario

AU - Rodriguez, Rosana

AU - Velayudhan, Vikas

AU - Nafria, Montserrat

AU - Aymerich, Xavier

AU - Gonzalez, Mireia Bargallo

AU - Simoen, Eddy

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N2 - This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.

AB - This paper addresses the impact of different electrical stresses on nanoscale electrical properties of the MOSFET gate dielectric. Using a conductive atomic force microscope (CAFM) for the first time, the gate oxide has been analyzed after bias temperature instability (BTI) and channel hot-carrier (CHC) stresses. The CAFM explicitly shows that while the degradation induced along the channel by a negative BTI stress is homogeneous, after a CHC stress different degradation levels can be distinguished, being higher close to source and drain. © 2014 IEEE.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

A conductive AFM nanoscale analysis of NBTI and channel hot-carrier degradation in MOSFETs

Abstract

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