A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

X. F. Duan; Wenbo Mi; Zaibing Guo; Haili Bai

doi:10.1063/1.4772682

A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

X. F. Duan, Wenbo Mi, Zaibing Guo, Haili Bai

Imaging & Characterization Core Lab

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

Original language	English (US)
Pages (from-to)	023701
Journal	Journal of Applied Physics
Volume	113
Issue number	2
DOIs	https://doi.org/10.1063/1.4772682
State	Published - Jan 8 2013

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KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

General Physics and Astronomy

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https://repository.kaust.edu.sa/bitstream/10754/552543/1/1.4772682.pdf

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title = "A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films",

abstract = "Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. {\textcopyright} 2013 American Institute of Physics.",

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T1 - A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

AU - Duan, X. F.

AU - Mi, Wenbo

AU - Guo, Zaibing

AU - Bai, Haili

N1 - KAUST Repository Item: Exported on 2020-10-01

PY - 2013/1/8

Y1 - 2013/1/8

N2 - Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

AB - Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.

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DO - 10.1063/1.4772682

M3 - Article

SN - 0021-8979

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

ER -

A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

Abstract

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