A CMOS RF Energy Harvester with 47% Peak Efficiency Using Internal Threshold Voltage Compensation

Danial Khan, Seong Jin Oh, Khuram Shehzad, Deeksha Verma, Zaffar Hayat Nawaz Khan, Young Gun Pu, Minjae Lee, Keum Cheol Hwang, Youngoo Yang, Kang Yoon Lee

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

This letter presents a dual-band (0.902 and 2.45 GHz) radio frequency (RF)-dc CMOS converter employing the internal threshold voltage cancelation (IVC) technique to harvest electromagnetic energy. The realized RF-dc CMOS converter maintains high power conversion efficiency (PCE) by passively reducing the threshold voltage of the forward-biased transistors so as to increase the harvested power, and increases the threshold voltage of the reverse-biased transistors to reduce the leakage current. More than 20% measured PCE is achieved at 0.902 GHz from -9 to 10-dBm input power range and a peak PCE of 47% is obtained at 1 dBm. At 2.45-GHz band, more than 11% measured PCE is achieved from -2 to 15 dBm input power range and a peak PCE of 27.1% is obtained at 6 dBm. A single-stage RF-dc CMOS converter is realized in 180-nm CMOS technology and it can serve as a good reference to multiband CMOS energy harvesting design in the future.
Original languageEnglish (US)
Pages (from-to)415-417
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume29
Issue number6
DOIs
StatePublished - Jun 1 2019
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-09-23

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