Abstract
We present a model of charge transport in polycrystalline electronic films, which considers details of the microscopic scale while simultaneously allowing realistically sized films to be simulated. We discuss the approximations and assumptions made by the model, and rationalize its application to thin films of directionally crystallized poly(3-hexylthiophene). In conjunction with experimental data, we use the model to characterize the effects of defects in these films. Our findings support the hypothesis that it is the directional crystallization of these films, rather than their defects, which causes anisotropic mobilities. © 2011 American Institute of Physics.
Original language | English (US) |
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Pages (from-to) | 113720 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 11 |
DOIs | |
State | Published - Jun 15 2011 |
Externally published | Yes |
Bibliographical note
KAUST Repository Item: Exported on 2020-10-01Acknowledged KAUST grant number(s): KUS-C1-015-21
Acknowledgements: This publication was partially based on work supported by the Center for Advanced Molecular Photovoltaics (Award No KUS-C1-015-21), made by King Abdullah University of Science and Technology (KAUST) and the National Science Foundation. L.H.J. acknowledges financial support from Toshiba Corporation. J.J.K. and A.J.S. are partially supported by the Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, under contract DE-AC02-76SF00515.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.