A 77GHz monolithic IMPATT transmitter in standard CMOS technology

Talal Al-Attar; Arjang Hassibi; Thomas H. Lee

doi:10.1109/MWSYM.2005.1517000

A 77GHz monolithic IMPATT transmitter in standard CMOS technology

Talal Al-Attar^*, Arjang Hassibi, Thomas H. Lee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

In this paper, a fully integrated transmitter at 77GHz is presented in a 0.18μm standard CMOS technology. The system consists of a lateral IMPATT diode and a microstrip patch antenna. The antenna impedance seen by the IMPATT diode is optimized using the high frequency electromagnetic (EM) field solver, Sonnet, which is matched to the measured impedance of the diode. The transmitted power had an offset frequency of -0.13% from the simulation results.

Original language	English (US)
Title of host publication	2005 IEEE MTT-S International Microwave Symposium Digest
Pages	1571-1574
Number of pages	4
DOIs	https://doi.org/10.1109/MWSYM.2005.1517000
State	Published - 2005
Externally published	Yes
Event	2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States Duration: Jun 12 2005 → Jun 17 2005

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2005
ISSN (Print)	0149-645X

Other

Other	2005 IEEE MTT-S International Microwave Symposium
Country/Territory	United States
City	Long Beach, CA
Period	06/12/05 → 06/17/05

Keywords

CMOS
IMPATT diode
Microstrip patch antenna
Sonnet
Stub
Vector network analyzer

ASJC Scopus subject areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/MWSYM.2005.1517000

Cite this

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title = "A 77GHz monolithic IMPATT transmitter in standard CMOS technology",

abstract = "In this paper, a fully integrated transmitter at 77GHz is presented in a 0.18μm standard CMOS technology. The system consists of a lateral IMPATT diode and a microstrip patch antenna. The antenna impedance seen by the IMPATT diode is optimized using the high frequency electromagnetic (EM) field solver, Sonnet, which is matched to the measured impedance of the diode. The transmitted power had an offset frequency of -0.13% from the simulation results.",

keywords = "CMOS, IMPATT diode, Microstrip patch antenna, Sonnet, Stub, Vector network analyzer",

author = "Talal Al-Attar and Arjang Hassibi and Lee, {Thomas H.}",

year = "2005",

doi = "10.1109/MWSYM.2005.1517000",

language = "English (US)",

isbn = "0780388461",

series = "IEEE MTT-S International Microwave Symposium Digest",

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Al-Attar, T, Hassibi, A & Lee, TH 2005, A 77GHz monolithic IMPATT transmitter in standard CMOS technology. in 2005 IEEE MTT-S International Microwave Symposium Digest., 1517000, IEEE MTT-S International Microwave Symposium Digest, vol. 2005, pp. 1571-1574, 2005 IEEE MTT-S International Microwave Symposium, Long Beach, CA, United States, 06/12/05. https://doi.org/10.1109/MWSYM.2005.1517000

A 77GHz monolithic IMPATT transmitter in standard CMOS technology. / Al-Attar, Talal; Hassibi, Arjang; Lee, Thomas H.
2005 IEEE MTT-S International Microwave Symposium Digest. 2005. p. 1571-1574 1517000 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this paper, a fully integrated transmitter at 77GHz is presented in a 0.18μm standard CMOS technology. The system consists of a lateral IMPATT diode and a microstrip patch antenna. The antenna impedance seen by the IMPATT diode is optimized using the high frequency electromagnetic (EM) field solver, Sonnet, which is matched to the measured impedance of the diode. The transmitted power had an offset frequency of -0.13% from the simulation results.

KW - CMOS

KW - IMPATT diode

KW - Microstrip patch antenna

KW - Sonnet

KW - Stub

KW - Vector network analyzer

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A 77GHz monolithic IMPATT transmitter in standard CMOS technology

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Keywords

ASJC Scopus subject areas

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