A 2-layer resist system derived from trimethylsilylstyrene

S. A. Macdonald; R. D. Allen; N. J. Clecak; C. G. Willson; J. M.J. Frechet

doi:10.1117/12.963622

A 2-layer resist system derived from trimethylsilylstyrene

S. A. Macdonald, R. D. Allen, N. J. Clecak, C. G. Willson, J. M.J. Frechet

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This paper describes the design and preparation of a negative tone, oxygen etch resistant DUV photoresist. This two-component resist system is composed of an oxygen plasma etch resistant matrix resin, poly(trimethylsilylmethylstyrene), and a monomeric radical generator such as trichlorobenzene or 3, 3’-diazidodiphenylsulfone.

Original language	English (US)
Pages (from-to)	28-33
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	631
DOIs	https://doi.org/10.1117/12.963622
State	Published - Jul 9 1986
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.963622

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abstract = "This paper describes the design and preparation of a negative tone, oxygen etch resistant DUV photoresist. This two-component resist system is composed of an oxygen plasma etch resistant matrix resin, poly(trimethylsilylmethylstyrene), and a monomeric radical generator such as trichlorobenzene or 3, 3{\textquoteright}-diazidodiphenylsulfone.",

author = "Macdonald, {S. A.} and Allen, {R. D.} and Clecak, {N. J.} and Willson, {C. G.} and Frechet, {J. M.J.}",

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AU - Willson, C. G.

AU - Frechet, J. M.J.

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AB - This paper describes the design and preparation of a negative tone, oxygen etch resistant DUV photoresist. This two-component resist system is composed of an oxygen plasma etch resistant matrix resin, poly(trimethylsilylmethylstyrene), and a monomeric radical generator such as trichlorobenzene or 3, 3’-diazidodiphenylsulfone.

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A 2-layer resist system derived from trimethylsilylstyrene

Abstract

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