740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

Kazuhiro Ohkawa; Tomomasa Watanabe; Masanori Sakamoto; Akira Hirako; Momoko Deura

doi:10.1016/j.jcrysgro.2011.12.075

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

Kazuhiro Ohkawa^*, Tomomasa Watanabe, Masanori Sakamoto, Akira Hirako, Momoko Deura

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

77 Scopus citations

Abstract

We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation.

Original language	English (US)
Pages (from-to)	13-16
Number of pages	4
Journal	Journal of Crystal Growth
Volume	343
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.12.075
State	Published - Mar 15 2012
Externally published	Yes

Keywords

A1. Crystal structure
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting IIIV materials
B3. Light emitting diodes

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2011.12.075

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title = "740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE",

abstract = "We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation.",

keywords = "A1. Crystal structure, A3. Metalorganic vapor phase epitaxy, B1. Nitrides, B2. Semiconducting IIIV materials, B3. Light emitting diodes",

author = "Kazuhiro Ohkawa and Tomomasa Watanabe and Masanori Sakamoto and Akira Hirako and Momoko Deura",

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doi = "10.1016/j.jcrysgro.2011.12.075",

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T1 - 740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

AU - Ohkawa, Kazuhiro

AU - Watanabe, Tomomasa

AU - Sakamoto, Masanori

AU - Hirako, Akira

AU - Deura, Momoko

PY - 2012/3/15

Y1 - 2012/3/15

N2 - We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation.

AB - We have realized for the first time deep-red emission from InGaN-based light-emitting diodes on c-plane sapphire substrates grown by metalorganic vapor-phase epitaxy. The peak wavelength was 740 nm by continuous current injection, in spite of a wide full-width at half-maximum. Indium incorporation was enhanced by a smaller distance of the opposing wall of the reactor from the susceptor, which resulted in raising the gas temperature. In addition, a higher number of quantum wells led to the relaxation of InGaN well layers and thus enhanced indium incorporation.

KW - A1. Crystal structure

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Nitrides

KW - B2. Semiconducting IIIV materials

KW - B3. Light emitting diodes

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DO - 10.1016/j.jcrysgro.2011.12.075

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SN - 0022-0248

VL - 343

SP - 13

EP - 16

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1

ER -

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

Abstract

Keywords

ASJC Scopus subject areas

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