Abstract
We demonstrated 10 × 10 arrays of InGaN 17 μm × 17 μm micro-light-emitting diodes (μLEDs) with a peak wavelength from 662 to 630 nm at 10–50 A∕cm2. The on-wafer external quantum efficiency reached 0.18% at 50 A∕cm2. The output power density of the red μLEDs was obtained as 1.76 mW∕mm2, which was estimated to be higher than that of 20 μm × 20 μm AlInGaP red μLEDs (∼630 nm). Finally, we demonstrate that InGaN red/green/blue μLEDs could exhibit a wide color gamut covering 81.3% and 79.1% of the Rec. 2020 color space
in CIE 1931 and 1976 diagrams, respectively.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1796 |
| Journal | Photonics Research |
| Volume | 9 |
| Issue number | 9 |
| DOIs | |
| State | Published - Aug 23 2021 |
Bibliographical note
KAUST Repository Item: Exported on 2021-08-25Acknowledged KAUST grant number(s): BAS/1/1676-01-01
Acknowledgements: The fabrication processes in this work were supported by Nanofabrication Core Labs in KAUST.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics