53-1: Invited Paper: Enhanced Performance of III-Nitride-Based Light-Emitting Diodes Through Novel Band Engineering and Fabrication Technology

Zhiyuan Liu; Yi Lu; Xiaohang Li

doi:10.1002/sdtp.16672

53-1: Invited Paper: Enhanced Performance of III-Nitride-Based Light-Emitting Diodes Through Novel Band Engineering and Fabrication Technology

Research output: Contribution to journal › Article › peer-review

Abstract

III-Nitride-based light-emitting diodes (LEDs) are expected to be used in enormous and broad applications. In this paper, our novel band engineering and fabrication technologies are reviewed and discussed for pursuing higher device performance.

Original language	English (US)
Pages (from-to)	761-762
Number of pages	2
Journal	SID Symposium Digest of Technical Papers
Volume	54
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.16672
State	Published - Aug 30 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-09-08
Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REI/1/4999-01-01, REI/1/5124-01-01, URF/1/3437-01-01, URF/1/3771-01-01
Acknowledgements: The authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, KAUST Competitive Research Grants URF/1/3437-01-01, URF/1/3771-01-01, KAUST Near-term Grand Challenge Fund REI/1/4999-01-01, and KAUST Impact Acceleration Fund REI/1/5124-01-01.

Access to Document

10.1002/sdtp.16672

Cite this

@article{d6185d29b04e4bde8c579ed86dba5f7c,

title = "53-1: Invited Paper: Enhanced Performance of III-Nitride-Based Light-Emitting Diodes Through Novel Band Engineering and Fabrication Technology",

abstract = "III-Nitride-based light-emitting diodes (LEDs) are expected to be used in enormous and broad applications. In this paper, our novel band engineering and fabrication technologies are reviewed and discussed for pursuing higher device performance.",

author = "Zhiyuan Liu and Yi Lu and Xiaohang Li",

note = "KAUST Repository Item: Exported on 2023-09-08 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REI/1/4999-01-01, REI/1/5124-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: The authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, KAUST Competitive Research Grants URF/1/3437-01-01, URF/1/3771-01-01, KAUST Near-term Grand Challenge Fund REI/1/4999-01-01, and KAUST Impact Acceleration Fund REI/1/5124-01-01.",

year = "2023",

month = aug,

day = "30",

doi = "10.1002/sdtp.16672",

language = "English (US)",

volume = "54",

pages = "761--762",

journal = "SID Symposium Digest of Technical Papers",

issn = "0097-966X",

number = "1",

}

TY - JOUR

T1 - 53-1: Invited Paper: Enhanced Performance of III-Nitride-Based Light-Emitting Diodes Through Novel Band Engineering and Fabrication Technology

AU - Liu, Zhiyuan

AU - Lu, Yi

AU - Li, Xiaohang

N1 - KAUST Repository Item: Exported on 2023-09-08 Acknowledged KAUST grant number(s): BAS/1/1664-01-01, REI/1/4999-01-01, REI/1/5124-01-01, URF/1/3437-01-01, URF/1/3771-01-01 Acknowledgements: The authors would like to acknowledge the support of KAUST Baseline Fund BAS/1/1664-01-01, KAUST Competitive Research Grants URF/1/3437-01-01, URF/1/3771-01-01, KAUST Near-term Grand Challenge Fund REI/1/4999-01-01, and KAUST Impact Acceleration Fund REI/1/5124-01-01.

PY - 2023/8/30

Y1 - 2023/8/30

N2 - III-Nitride-based light-emitting diodes (LEDs) are expected to be used in enormous and broad applications. In this paper, our novel band engineering and fabrication technologies are reviewed and discussed for pursuing higher device performance.

AB - III-Nitride-based light-emitting diodes (LEDs) are expected to be used in enormous and broad applications. In this paper, our novel band engineering and fabrication technologies are reviewed and discussed for pursuing higher device performance.

UR - http://hdl.handle.net/10754/694212

UR - https://sid.onlinelibrary.wiley.com/doi/10.1002/sdtp.16672

U2 - 10.1002/sdtp.16672

DO - 10.1002/sdtp.16672

M3 - Article

SN - 0097-966X

VL - 54

SP - 761

EP - 762

JO - SID Symposium Digest of Technical Papers

JF - SID Symposium Digest of Technical Papers

IS - 1

ER -

53-1: Invited Paper: Enhanced Performance of III-Nitride-Based Light-Emitting Diodes Through Novel Band Engineering and Fabrication Technology

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this