4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication

Changmin Lee; Chong Zhang; Michael Cantore; Robert M. Farrell; Sang Ho Oh; Tal Margalith; James S. Speck; Shuji Nakamura; John E. Bowers; Steven P. DenBaars

doi:10.1364/oe.23.016232

4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication

Changmin Lee, Chong Zhang, Michael Cantore, Robert M. Farrell, Sang Ho Oh, Tal Margalith, James S. Speck, Shuji Nakamura, John E. Bowers, Steven P. DenBaars

Research output: Contribution to journal › Article › peer-review

138 Scopus citations

Abstract

We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature.

Original language	English (US)
Pages (from-to)	16232
Journal	Optics Express
Volume	23
Issue number	12
DOIs	https://doi.org/10.1364/oe.23.016232
State	Published - Jun 10 2015
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank Sudharsanan Srinivasan, Cedric Meyers, Ludovico Megalini, and Hyunchul Park for the meaningful discussions about measurement setup, testing, and device analysis. This work was supported by the Solid State Lighting & Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

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Cite this

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title = "4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication",

abstract = "We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature.",

author = "Changmin Lee and Chong Zhang and Michael Cantore and Farrell, {Robert M.} and Oh, {Sang Ho} and Tal Margalith and Speck, {James S.} and Shuji Nakamura and Bowers, {John E.} and DenBaars, {Steven P.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank Sudharsanan Srinivasan, Cedric Meyers, Ludovico Megalini, and Hyunchul Park for the meaningful discussions about measurement setup, testing, and device analysis. This work was supported by the Solid State Lighting & Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2015",

month = jun,

day = "10",

doi = "10.1364/oe.23.016232",

language = "English (US)",

volume = "23",

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journal = "Optics Express",

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TY - JOUR

T1 - 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication

AU - Lee, Changmin

AU - Zhang, Chong

AU - Cantore, Michael

AU - Farrell, Robert M.

AU - Oh, Sang Ho

AU - Margalith, Tal

AU - Speck, James S.

AU - Nakamura, Shuji

AU - Bowers, John E.

AU - DenBaars, Steven P.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: The authors would like to thank Sudharsanan Srinivasan, Cedric Meyers, Ludovico Megalini, and Hyunchul Park for the meaningful discussions about measurement setup, testing, and device analysis. This work was supported by the Solid State Lighting & Energy Electronics Center (SSLEEC) and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2015/6/10

Y1 - 2015/6/10

N2 - We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature.

AB - We demonstrate high-speed data transmission with a commercial high power GaN laser diode at 450 nm. 2.6 GHz bandwidth was achieved at an injection current of 500 mA using a high-speed visible light communication setup. Record high 4 Gbps free-space data transmission rate was achieved at room temperature.

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DO - 10.1364/oe.23.016232

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SP - 16232

JO - Optics Express

JF - Optics Express

IS - 12

ER -

4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication

Abstract

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