2D h-BN based RRAM devices

F. M. Puglisi; L. Larcher; C. Pan; N. Xiao; Y. Shi; F. Hui; M. Lanza

doi:10.1109/IEDM.2016.7838544

2D h-BN based RRAM devices

F. M. Puglisi, L. Larcher, C. Pan, N. Xiao, Y. Shi, F. Hui, M. Lanza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

20 Scopus citations

Abstract

This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.

Original language	English (US)
Title of host publication	Technical Digest - International Electron Devices Meeting, IEDM
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	34.8.1-34.8.4
Number of pages	1
ISBN (Print)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838544
State	Published - Jan 31 2017
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

Access to Document

10.1109/IEDM.2016.7838544

Cite this

@inproceedings{187334a5e17340f4bf3fc340d346bc07,

title = "2D h-BN based RRAM devices",

abstract = "This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.",

author = "Puglisi, {F. M.} and L. Larcher and C. Pan and N. Xiao and Y. Shi and F. Hui and M. Lanza",

note = "Generated from Scopus record by KAUST IRTS on 2021-03-16",

year = "2017",

month = jan,

day = "31",

doi = "10.1109/IEDM.2016.7838544",

language = "English (US)",

isbn = "9781509039012",

pages = "34.8.1--34.8.4",

booktitle = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

TY - GEN

T1 - 2D h-BN based RRAM devices

AU - Puglisi, F. M.

AU - Larcher, L.

AU - Pan, C.

AU - Xiao, N.

AU - Shi, Y.

AU - Hui, F.

AU - Lanza, M.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2017/1/31

Y1 - 2017/1/31

N2 - This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.

AB - This paper presents two dimensional (2D) RRAM devices exploiting multilayer hexagonal boron nitride (h-BN) as active switching layer. Different electrodes including Cu, Ni-doped Cu (CuNi) and graphene (G) are considered. The devices show low set/reset voltages, high on/off current ratio, good endurance and very low overall variability. Experimental results are interpreted using a novel simulation framework, which proves that the memory behavior is enabled by the manipulation of a boron (B)-deficient conductive filament (CF). The cyclical release and diffusion of B ions are the key physical mechanisms responsible for switching.

UR - http://ieeexplore.ieee.org/document/7838544/

UR - http://www.scopus.com/inward/record.url?scp=85014434721&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2016.7838544

DO - 10.1109/IEDM.2016.7838544

M3 - Conference contribution

SN - 9781509039012

SP - 34.8.1-34.8.4

BT - Technical Digest - International Electron Devices Meeting, IEDM

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

2D h-BN based RRAM devices

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this