24 GHz on-chip antennas and balun on bulk Si for air transmission

Atif Shamim; Langis Roy; Neric Fong; N. Garry Tarr

doi:10.1109/TAP.2007.915421

24 GHz on-chip antennas and balun on bulk Si for air transmission

Atif Shamim^*, Langis Roy, Neric Fong, N. Garry Tarr

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

The conditions are investigated under which standard digital bulk Si technology can yield efficient on-chip antennas and baluns for fully differential transmitter and receiver implementations. The effects of the IC material properties and the antenna geometry on radiation and impedance characteristics have been studied. 24 GHz on-chip antennas on lossy Si have been successfully demonstrated, using a standard IC fabrication compatible Cu process. The fabricated antennas demonstrate a gain ranging from - 8 to - 10.5 dBi, which is to the best of the author's knowledge, the highest gain reported for antennas in a 10 Ω-cm Si substrate to date.

Original language	English (US)
Pages (from-to)	303-311
Number of pages	9
Journal	IEEE Transactions on Antennas and Propagation
Volume	56
Issue number	2
DOIs	https://doi.org/10.1109/TAP.2007.915421
State	Published - Feb 2008
Externally published	Yes

Keywords

Balun
De-embedding
Near field
On-chip antenna
Radiation pattern

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/TAP.2007.915421

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abstract = "The conditions are investigated under which standard digital bulk Si technology can yield efficient on-chip antennas and baluns for fully differential transmitter and receiver implementations. The effects of the IC material properties and the antenna geometry on radiation and impedance characteristics have been studied. 24 GHz on-chip antennas on lossy Si have been successfully demonstrated, using a standard IC fabrication compatible Cu process. The fabricated antennas demonstrate a gain ranging from - 8 to - 10.5 dBi, which is to the best of the author's knowledge, the highest gain reported for antennas in a 10 Ω-cm Si substrate to date.",

keywords = "Balun, De-embedding, Near field, On-chip antenna, Radiation pattern",

author = "Atif Shamim and Langis Roy and Neric Fong and Tarr, {N. Garry}",

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AU - Shamim, Atif

AU - Roy, Langis

AU - Fong, Neric

AU - Tarr, N. Garry

PY - 2008/2

Y1 - 2008/2

N2 - The conditions are investigated under which standard digital bulk Si technology can yield efficient on-chip antennas and baluns for fully differential transmitter and receiver implementations. The effects of the IC material properties and the antenna geometry on radiation and impedance characteristics have been studied. 24 GHz on-chip antennas on lossy Si have been successfully demonstrated, using a standard IC fabrication compatible Cu process. The fabricated antennas demonstrate a gain ranging from - 8 to - 10.5 dBi, which is to the best of the author's knowledge, the highest gain reported for antennas in a 10 Ω-cm Si substrate to date.

AB - The conditions are investigated under which standard digital bulk Si technology can yield efficient on-chip antennas and baluns for fully differential transmitter and receiver implementations. The effects of the IC material properties and the antenna geometry on radiation and impedance characteristics have been studied. 24 GHz on-chip antennas on lossy Si have been successfully demonstrated, using a standard IC fabrication compatible Cu process. The fabricated antennas demonstrate a gain ranging from - 8 to - 10.5 dBi, which is to the best of the author's knowledge, the highest gain reported for antennas in a 10 Ω-cm Si substrate to date.

KW - Balun

KW - De-embedding

KW - Near field

KW - On-chip antenna

KW - Radiation pattern

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JO - IEEE Transactions on Antennas and Propagation

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IS - 2

ER -

24 GHz on-chip antennas and balun on bulk Si for air transmission

Abstract

Keywords

ASJC Scopus subject areas

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