22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Jonas Geissbühler*, Jérémie Werner, Silvia Martin De Nicolas, Loris Barraud, Aïcha Hessler-Wyser, Matthieu Despeisse, Sylvain Nicolay, Andrea Tomasi, Bjoern Niesen, Stefaan De Wolf, Christophe Ballif

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

322 Scopus citations


Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130°C - often needed for the curing of printed metal contacts - detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

Original languageEnglish (US)
Article number081601
JournalApplied Physics Letters
Issue number8
StatePublished - Aug 24 2015

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this