22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Jonas Geissbühler; Jérémie Werner; Silvia Martin De Nicolas; Loris Barraud; Aïcha Hessler-Wyser; Matthieu Despeisse; Sylvain Nicolay; Andrea Tomasi; Bjoern Niesen; Stefaan De Wolf; Christophe Ballif

doi:10.1063/1.4928747

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Jonas Geissbühler^*, Jérémie Werner, Silvia Martin De Nicolas, Loris Barraud, Aïcha Hessler-Wyser, Matthieu Despeisse, Sylvain Nicolay, Andrea Tomasi, Bjoern Niesen, Stefaan De Wolf, Christophe Ballif

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

381 Scopus citations

Abstract

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130°C - often needed for the curing of printed metal contacts - detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

Original language	English (US)
Article number	081601
Journal	Applied Physics Letters
Volume	107
Issue number	8
DOIs	https://doi.org/10.1063/1.4928747
State	Published - Aug 24 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4928747

Cite this

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abstract = "Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130°C - often needed for the curing of printed metal contacts - detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.",

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AU - Geissbühler, Jonas

AU - Werner, Jérémie

AU - Martin De Nicolas, Silvia

AU - Barraud, Loris

AU - Hessler-Wyser, Aïcha

AU - Despeisse, Matthieu

AU - Nicolay, Sylvain

AU - Tomasi, Andrea

AU - Niesen, Bjoern

AU - De Wolf, Stefaan

AU - Ballif, Christophe

PY - 2015/8/24

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22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Abstract

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