1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge

Tien Khee Ng; Soon Fatt Yoon; Kian Hua Tan; Wan Khai Loke; Satrio Wicaksono; Kim Luong Lew; Kah Pin Chen; Eugene A. Fitzgerald; Arthur J. Pitera; Steve A. Ringel; Andrew M. Carlin; Maria Gonzalez

doi:10.1109/PVSC.2009.5411736

1EV GaN_xAs_1-x-ySb_y material for lattice-matched III-V solar cell implementation on GaAs and Ge

Tien Khee Ng, Soon Fatt Yoon, Kian Hua Tan, Wan Khai Loke, Satrio Wicaksono, Kim Luong Lew, Kah Pin Chen, Eugene A. Fitzgerald, Arthur J. Pitera, Steve A. Ringel, Andrew M. Carlin, Maria Gonzalez

Physical Sciences and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The effect of different arsenic species (As₂ or As₄) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p⁺ n^- n⁺ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As2 overpressure for GaNAsSb growth.

Original language	English (US)
Title of host publication	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Pages	76-80
Number of pages	5
DOIs	https://doi.org/10.1109/PVSC.2009.5411736
State	Published - 2009
Event	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 - Philadelphia, PA, United States Duration: Jun 7 2009 → Jun 12 2009

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Other

Other	2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
Country/Territory	United States
City	Philadelphia, PA
Period	06/7/09 → 06/12/09

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC.2009.5411736

Cite this

Ng, T. K., Yoon, S. F., Tan, K. H., Loke, W. K., Wicaksono, S., Lew, K. L., Chen, K. P., Fitzgerald, E. A., Pitera, A. J., Ringel, S. A., Carlin, A. M., & Gonzalez, M. (2009). 1EV GaN_xAs_1-x-ySb_y material for lattice-matched III-V solar cell implementation on GaAs and Ge. In 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 (pp. 76-80). Article 5411736 (Conference Record of the IEEE Photovoltaic Specialists Conference). https://doi.org/10.1109/PVSC.2009.5411736

@inproceedings{d43b2b4c791641e39adb1dd02e4ef36e,

title = "1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge",

abstract = "The effect of different arsenic species (As2 or As4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+ n- n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As2 overpressure for GaNAsSb growth.",

author = "Ng, {Tien Khee} and Yoon, {Soon Fatt} and Tan, {Kian Hua} and Loke, {Wan Khai} and Satrio Wicaksono and Lew, {Kim Luong} and Chen, {Kah Pin} and Fitzgerald, {Eugene A.} and Pitera, {Arthur J.} and Ringel, {Steve A.} and Carlin, {Andrew M.} and Maria Gonzalez",

year = "2009",

doi = "10.1109/PVSC.2009.5411736",

language = "English (US)",

isbn = "9781424429509",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

pages = "76--80",

booktitle = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009",

note = "2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 ; Conference date: 07-06-2009 Through 12-06-2009",

}

Ng, TK, Yoon, SF, Tan, KH, Loke, WK, Wicaksono, S, Lew, KL, Chen, KP, Fitzgerald, EA, Pitera, AJ, Ringel, SA, Carlin, AM & Gonzalez, M 2009, 1EV GaN_xAs_1-x-ySb_y material for lattice-matched III-V solar cell implementation on GaAs and Ge. in 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009., 5411736, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 76-80, 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009, Philadelphia, PA, United States, 06/7/09. https://doi.org/10.1109/PVSC.2009.5411736

1EV GaN_xAs_1-x-ySb_y material for lattice-matched III-V solar cell implementation on GaAs and Ge. / Ng, Tien Khee; Yoon, Soon Fatt; Tan, Kian Hua et al.
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. p. 76-80 5411736 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - 1EV GaNxAs1-x-ySby material for lattice-matched III-V solar cell implementation on GaAs and Ge

AU - Ng, Tien Khee

AU - Yoon, Soon Fatt

AU - Tan, Kian Hua

AU - Loke, Wan Khai

AU - Wicaksono, Satrio

AU - Lew, Kim Luong

AU - Chen, Kah Pin

AU - Fitzgerald, Eugene A.

AU - Pitera, Arthur J.

AU - Ringel, Steve A.

AU - Carlin, Andrew M.

AU - Gonzalez, Maria

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AB - The effect of different arsenic species (As2 or As4) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+ n- n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As2 overpressure for GaNAsSb growth.

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