1.55 μm GaAsGaNAsSbGaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

K. H. Tan; S. F. Yoon; W. K. Loke; S. Wicaksono; Z. Xu; T. K. Ng; K. L. Lew; N. Saadsaoud; M. Zegaoui; D. Decoster; J. Chazelas

doi:10.1063/1.2898507

1.55 μm GaAsGaNAsSbGaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

K. H. Tan, S. F. Yoon, W. K. Loke, S. Wicaksono, Z. Xu, T. K. Ng, K. L. Lew, N. Saadsaoud, M. Zegaoui, D. Decoster, J. Chazelas

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Abstract

We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was measured from 800 to 1700 nm. The GaNAsSb layer has a refractive index value of 3.42 at 1.55 μm wavelength. The propagation loss measured using the Fabry-Ṕrot resonance method was found to be affected by nitrogen-related defect absorption.

Original language	English (US)
Article number	113513
Journal	Applied Physics Letters
Volume	92
Issue number	11
DOIs	https://doi.org/10.1063/1.2898507
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "1.55 μm GaAsGaNAsSbGaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy",

abstract = "We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was measured from 800 to 1700 nm. The GaNAsSb layer has a refractive index value of 3.42 at 1.55 μm wavelength. The propagation loss measured using the Fabry-Ṕrot resonance method was found to be affected by nitrogen-related defect absorption.",

author = "Tan, {K. H.} and Yoon, {S. F.} and Loke, {W. K.} and S. Wicaksono and Z. Xu and Ng, {T. K.} and Lew, {K. L.} and N. Saadsaoud and M. Zegaoui and D. Decoster and J. Chazelas",

year = "2008",

doi = "10.1063/1.2898507",

language = "English (US)",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

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TY - JOUR

T1 - 1.55 μm GaAsGaNAsSbGaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

AU - Tan, K. H.

AU - Yoon, S. F.

AU - Loke, W. K.

AU - Wicaksono, S.

AU - Xu, Z.

AU - Ng, T. K.

AU - Lew, K. L.

AU - Saadsaoud, N.

AU - Zegaoui, M.

AU - Decoster, D.

AU - Chazelas, J.

PY - 2008

Y1 - 2008

N2 - We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was measured from 800 to 1700 nm. The GaNAsSb layer has a refractive index value of 3.42 at 1.55 μm wavelength. The propagation loss measured using the Fabry-Ṕrot resonance method was found to be affected by nitrogen-related defect absorption.

AB - We demonstrate a 1.55 μm GaAsGaNAsSbGaAs optical waveguide grown by molecular beam epitaxy as an alternative to the AlGaAsGaAs system. The 0.4-μm -thick GaNAsSb guiding layer contains ∼3.5% of N and 9% of Sb, resulting in optical band gap of 0.88 eV. The refractive index of the GaNAsSb layer was measured from 800 to 1700 nm. The GaNAsSb layer has a refractive index value of 3.42 at 1.55 μm wavelength. The propagation loss measured using the Fabry-Ṕrot resonance method was found to be affected by nitrogen-related defect absorption.

UR - http://www.scopus.com/inward/record.url?scp=41049092573&partnerID=8YFLogxK

U2 - 10.1063/1.2898507

DO - 10.1063/1.2898507

M3 - Article

AN - SCOPUS:41049092573

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113513

ER -

1.55 μm GaAsGaNAsSbGaAs optical waveguides grown by radio frequency nitrogen plasma-assisted molecular beam epitaxy

Abstract

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