1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks

Si Zhu; Bei Shi; Yating Wan; Evelyn L. Hu; Kei May Lau

doi:10.1364/OL.42.000679

1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks

Si Zhu, Bei Shi, Yating Wan, Evelyn L. Hu, Kei May Lau

Research output: Contribution to journal › Article › peer-review

25 Scopus citations

Abstract

InAs/InAlGaAs quantum dot active layers within microcavity resonators offer the potential of ultra-low-threshold lasing in the 1.55 μm telecom window. Here, we demonstrate the first quantum dot microdisk laser with single-mode emission around 1.55 μm under continuous-wave optical pumping up to 170 K. The extracted threshold is as low as 32 μW at 77 K. This result lays the foundation of an alternative to quantum-well microlasers for low-threshold and highly compact monolithically integratable light emitting sources in fiber communication.

Original language	English (US)
Pages (from-to)	679-682
Number of pages	4
Journal	OPTICS LETTERS
Volume	42
Issue number	4
DOIs	https://doi.org/10.1364/OL.42.000679
State	Published - Feb 15 2017
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-09-18

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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abstract = "InAs/InAlGaAs quantum dot active layers within microcavity resonators offer the potential of ultra-low-threshold lasing in the 1.55 μm telecom window. Here, we demonstrate the first quantum dot microdisk laser with single-mode emission around 1.55 μm under continuous-wave optical pumping up to 170 K. The extracted threshold is as low as 32 μW at 77 K. This result lays the foundation of an alternative to quantum-well microlasers for low-threshold and highly compact monolithically integratable light emitting sources in fiber communication.",

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T1 - 1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks

AU - Zhu, Si

AU - Shi, Bei

AU - Wan, Yating

AU - Hu, Evelyn L.

AU - Lau, Kei May

N1 - Generated from Scopus record by KAUST IRTS on 2023-09-18

PY - 2017/2/15

Y1 - 2017/2/15

N2 - InAs/InAlGaAs quantum dot active layers within microcavity resonators offer the potential of ultra-low-threshold lasing in the 1.55 μm telecom window. Here, we demonstrate the first quantum dot microdisk laser with single-mode emission around 1.55 μm under continuous-wave optical pumping up to 170 K. The extracted threshold is as low as 32 μW at 77 K. This result lays the foundation of an alternative to quantum-well microlasers for low-threshold and highly compact monolithically integratable light emitting sources in fiber communication.

AB - InAs/InAlGaAs quantum dot active layers within microcavity resonators offer the potential of ultra-low-threshold lasing in the 1.55 μm telecom window. Here, we demonstrate the first quantum dot microdisk laser with single-mode emission around 1.55 μm under continuous-wave optical pumping up to 170 K. The extracted threshold is as low as 32 μW at 77 K. This result lays the foundation of an alternative to quantum-well microlasers for low-threshold and highly compact monolithically integratable light emitting sources in fiber communication.

UR - https://opg.optica.org/abstract.cfm?URI=ol-42-4-679

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DO - 10.1364/OL.42.000679

M3 - Article

SN - 1539-4794

VL - 42

SP - 679

EP - 682

JO - OPTICS LETTERS

JF - OPTICS LETTERS

IS - 4

ER -

1.55 μm band low-threshold, continuous-wave lasing from InAs/InAlGaAs quantum dot microdisks

Abstract

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