150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

X. Liang; B. Yuan; Y. Shi; F. Palumbo; S. Chen; F. Hui; X. Jing; M. A. Villena; M. Lanza

doi:10.1109/EDTM.2019.8731155

150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

X. Liang, B. Yuan, Y. Shi, F. Palumbo, S. Chen, F. Hui, X. Jing, M. A. Villena, M. Lanza

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.

Original language	English (US)
Title of host publication	2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	258-260
Number of pages	3
ISBN (Print)	9781538665084
DOIs	https://doi.org/10.1109/EDTM.2019.8731155
State	Published - Mar 1 2019
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

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10.1109/EDTM.2019.8731155

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Liang, X., Yuan, B., Shi, Y., Palumbo, F., Chen, S., Hui, F., Jing, X., Villena, M. A., & Lanza, M. (2019). 150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 258-260). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731155

@inproceedings{dfa8f98dce514a18b6c3e32a14071f4c,

title = "150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state",

abstract = "Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.",

author = "X. Liang and B. Yuan and Y. Shi and F. Palumbo and S. Chen and F. Hui and X. Jing and Villena, {M. A.} and M. Lanza",

note = "Generated from Scopus record by KAUST IRTS on 2021-03-16",

year = "2019",

month = mar,

day = "1",

doi = "10.1109/EDTM.2019.8731155",

language = "English (US)",

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Liang, X, Yuan, B, Shi, Y, Palumbo, F, Chen, S, Hui, F, Jing, X, Villena, MA & Lanza, M 2019, 150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state. in 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., pp. 258-260. https://doi.org/10.1109/EDTM.2019.8731155

150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state. / Liang, X.; Yuan, B.; Shi, Y. et al.
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 258-260.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - 150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

AU - Liang, X.

AU - Yuan, B.

AU - Shi, Y.

AU - Palumbo, F.

AU - Chen, S.

AU - Hui, F.

AU - Jing, X.

AU - Villena, M. A.

AU - Lanza, M.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2019/3/1

Y1 - 2019/3/1

N2 - Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.

AB - Here we show the fabrication of small-size cross point memristors using multilayer hexagonal boron nitride (h-BN) as switching layer. Excellent bipolar resistive switching (RS) with current ON/OFF ratios >1000 and low variability is demonstrated. The devices can also be operated in threshold RS mode, and the currents in high resistive state (HRS) are the lowest ever reported (10fA @0.1V), making possible their use as selector.

UR - https://ieeexplore.ieee.org/document/8731155/

UR - http://www.scopus.com/inward/record.url?scp=85067810611&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2019.8731155

DO - 10.1109/EDTM.2019.8731155

M3 - Conference contribution

SN - 9781538665084

SP - 258

EP - 260

BT - 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

150 nm × 200 nm cross point hexagonal boron nitride based memristors with ultra-low currents in high resistive state

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