Abstract
2-nm-thick ZnO nanoislands have been grown using Atomic Layer Deposition (ALD) on the surface of n-i-p a-Si:H solar cells. With the nanoislands, an average improvement of 10.6% in short circuit current density (Jsc) and 12.05% in efficiency compared to the reference cell are achieved. Improved spectral response is obtained from ZnO nanoislands coated cell with an improvement of 4.2% and 5.25% in peak EQE and IQE respectively. The coated cell also minimizes reflection between 340-520 nm indicating light scattering ability of these nanoislands. Further analysis suggests that overall enhancement can be attributed to photon energy downshifting with a reduction in reflectivity.
Original language | English (US) |
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Title of host publication | 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 318-322 |
Number of pages | 5 |
ISBN (Electronic) | 9781509027248 |
DOIs | |
State | Published - Nov 18 2016 |
Event | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: Jun 5 2016 → Jun 10 2016 |
Publication series
Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
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Volume | 2016-November |
ISSN (Print) | 0160-8371 |
Other
Other | 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 |
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Country/Territory | United States |
City | Portland |
Period | 06/5/16 → 06/10/16 |
Bibliographical note
Publisher Copyright:© 2016 IEEE.
Keywords
- down shifting
- light scattering
- solar cells
- ZnO nanoislands
ASJC Scopus subject areas
- Control and Systems Engineering
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering