100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Xiaohang Li; Shuo Wang; Hanxiao Liu; Fernando A. Ponce; Theeradetch Detchprohm; Russell D. Dupuis

doi:10.1002/pssb.201600699

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Xiaohang Li, Shuo Wang, Hanxiao Liu, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis

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38 Scopus citations

Abstract

Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

Original language	English (US)
Pages (from-to)	1600699
Journal	physica status solidi (b)
Volume	254
Issue number	8
DOIs	https://doi.org/10.1002/pssb.201600699
State	Published - Jan 11 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories.

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@article{91f7683d7b47494abd1934bbcc6394b3,

title = "100-nm thick single-phase wurtzite BAlN films with boron contents over 10%",

abstract = "Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.",

author = "Xiaohang Li and Shuo Wang and Hanxiao Liu and Ponce, {Fernando A.} and Theeradetch Detchprohm and Dupuis, {Russell D.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories.",

year = "2017",

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doi = "10.1002/pssb.201600699",

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T1 - 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

AU - Li, Xiaohang

AU - Wang, Shuo

AU - Liu, Hanxiao

AU - Ponce, Fernando A.

AU - Detchprohm, Theeradetch

AU - Dupuis, Russell D.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories.

PY - 2017/1/11

Y1 - 2017/1/11

N2 - Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

AB - Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

UR - http://hdl.handle.net/10754/623013

UR - http://onlinelibrary.wiley.com/doi/10.1002/pssb.201600699/full

UR - http://www.scopus.com/inward/record.url?scp=85026893372&partnerID=8YFLogxK

U2 - 10.1002/pssb.201600699

DO - 10.1002/pssb.201600699

M3 - Article

SN - 0370-1972

VL - 254

SP - 1600699

JO - physica status solidi (b)

JF - physica status solidi (b)

IS - 8

ER -

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

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