100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

Xiaohang Li, Shuo Wang, Hanxiao Liu, Fernando A. Ponce, Theeradetch Detchprohm, Russell D. Dupuis

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.
Original languageEnglish (US)
Pages (from-to)1600699
Journalphysica status solidi (b)
Issue number8
StatePublished - Jan 11 2017

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the U.S. National Science Foundation under DMR-1410874. RDD acknowledges support of the Steve W. Chaddick Endowed Chair in Electro-Optics and the Georgia Research Alliance. XL acknowledges support of the KAUST startup and baseline funding. The authors acknowledge beneficial discussion of RBS data with Dr. Daniel Tseng from EAG Laboratories.


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