100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Dimitra G Georgiadou; James Semple; Abhay A. Sagade; Henrik Forstén; Pekka Rantakari; Yen-Hung Lin; Feras Alkhalil; Akmaral Seitkhan; Kalaivanan Loganathan; Hendrik Faber; Thomas D. Anthopoulos

doi:10.1038/s41928-020-00484-7

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Dimitra G Georgiadou, James Semple, Abhay A. Sagade, Henrik Forstén, Pekka Rantakari, Yen-Hung Lin, Feras Alkhalil, Akmaral Seitkhan, Kalaivanan Loganathan, Hendrik Faber, Thomas D. Anthopoulos

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57 Scopus citations

Abstract

Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

Original language	English (US)
Journal	Nature Electronics
DOIs	https://doi.org/10.1038/s41928-020-00484-7
State	Published - Oct 19 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-30
Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079
Acknowledgements: D.G.G., J.S. and T.D.A. acknowledge financial support from the European Union Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement 706707, the European Research Council (ERC) project AMPRO under grant no. 280221, the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/P505550/1 and the EPSRC Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) grant no. EP/K03099X/1. A.S., K.L., H.F. and T.D.A. acknowledge support by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. A.A.S. thanks SERB for an Early Research Career Award (ECR/2017/1562) and SRM IST for financial support. We also thank S. Kano for helpful discussion on the nanogap size analysis.

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title = "100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale",

abstract = "Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.",

author = "Georgiadou, {Dimitra G} and James Semple and Sagade, {Abhay A.} and Henrik Forst{\'e}n and Pekka Rantakari and Yen-Hung Lin and Feras Alkhalil and Akmaral Seitkhan and Kalaivanan Loganathan and Hendrik Faber and Anthopoulos, {Thomas D.}",

note = "KAUST Repository Item: Exported on 2020-10-30 Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079 Acknowledgements: D.G.G., J.S. and T.D.A. acknowledge financial support from the European Union Horizon 2020 research and innovation programme under the Marie Sk{\l}odowska-Curie grant agreement 706707, the European Research Council (ERC) project AMPRO under grant no. 280221, the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/P505550/1 and the EPSRC Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) grant no. EP/K03099X/1. A.S., K.L., H.F. and T.D.A. acknowledge support by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. A.A.S. thanks SERB for an Early Research Career Award (ECR/2017/1562) and SRM IST for financial support. We also thank S. Kano for helpful discussion on the nanogap size analysis.",

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doi = "10.1038/s41928-020-00484-7",

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AU - Georgiadou, Dimitra G

AU - Semple, James

AU - Sagade, Abhay A.

AU - Forstén, Henrik

AU - Rantakari, Pekka

AU - Lin, Yen-Hung

AU - Alkhalil, Feras

AU - Seitkhan, Akmaral

AU - Loganathan, Kalaivanan

AU - Faber, Hendrik

AU - Anthopoulos, Thomas D.

N1 - KAUST Repository Item: Exported on 2020-10-30 Acknowledged KAUST grant number(s): OSR-2018-CARF/CCF-3079 Acknowledgements: D.G.G., J.S. and T.D.A. acknowledge financial support from the European Union Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement 706707, the European Research Council (ERC) project AMPRO under grant no. 280221, the Engineering and Physical Sciences Research Council (EPSRC) grant no. EP/P505550/1 and the EPSRC Centre for Innovative Manufacturing in Large Area Electronics (CIM-LAE) grant no. EP/K03099X/1. A.S., K.L., H.F. and T.D.A. acknowledge support by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under award no. OSR-2018-CARF/CCF-3079. A.A.S. thanks SERB for an Early Research Career Award (ECR/2017/1562) and SRM IST for financial support. We also thank S. Kano for helpful discussion on the nanogap size analysis.

PY - 2020/10/19

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N2 - Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

AB - Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

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DO - 10.1038/s41928-020-00484-7

M3 - Article

SN - 2520-1131

JO - Nature Electronics

JF - Nature Electronics

ER -

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

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