δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells

Minglei Sun

doi:10.1103/PhysRevApplied.14.044015

δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells

Minglei Sun

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

69 Scopus citations

Abstract

We propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.

Original language	English (US)
Journal	Physical Review Applied
Volume	14
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevApplied.14.044015
State	Published - Oct 10 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-30
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Huabing Shu and Mr. Ziang Zhang for assistance with PYTHON programming.

Access to Document

10.1103/PhysRevApplied.14.044015

Cite this

@article{ac04b9213b894b2fb4f2695cb0a13d19,

title = "δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells",

abstract = "We propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.",

author = "Minglei Sun",

note = "KAUST Repository Item: Exported on 2020-10-30 Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Huabing Shu and Mr. Ziang Zhang for assistance with PYTHON programming.",

year = "2020",

month = oct,

day = "10",

doi = "10.1103/PhysRevApplied.14.044015",

language = "English (US)",

volume = "14",

journal = "Physical Review Applied",

issn = "2331-7019",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells

AU - Sun, Minglei

N1 - KAUST Repository Item: Exported on 2020-10-30 Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Huabing Shu and Mr. Ziang Zhang for assistance with PYTHON programming.

PY - 2020/10/10

Y1 - 2020/10/10

N2 - We propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.

AB - We propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.

UR - http://hdl.handle.net/10754/665696

UR - https://link.aps.org/doi/10.1103/PhysRevApplied.14.044015

UR - http://www.scopus.com/inward/record.url?scp=85093359802&partnerID=8YFLogxK

U2 - 10.1103/PhysRevApplied.14.044015

DO - 10.1103/PhysRevApplied.14.044015

M3 - Article

SN - 2331-7019

VL - 14

JO - Physical Review Applied

JF - Physical Review Applied

IS - 4

ER -

δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this