δ-CS: A Direct-Band-Gap Semiconductor Combining Auxeticity, Ferroelasticity, and Potential for High-Efficiency Solar Cells

Minglei Sun

Research output: Contribution to journalArticlepeer-review

77 Scopus citations

Abstract

We propose a two-dimensional material, δ-CS, and show that it is a direct-band-gap semiconductor with strong absorption of solar radiation. Power conversion efficiencies of 7.0% to 20.1% are predicted for solar cells with δ-CS as a donor and a transition metal dichalcogenide as an acceptor. δ-CS also excels in terms of having an exceptionally large negative in-plane Poisson's ratio. Its ferroelasticity with moderate switching barrier is promising for applications in shape memory devices.
Original languageEnglish (US)
JournalPhysical Review Applied
Volume14
Issue number4
DOIs
StatePublished - Oct 10 2020

Bibliographical note

KAUST Repository Item: Exported on 2020-10-30
Acknowledgements: The research reported in this publication was supported by funding from King Abdullah University of Science and Technology (KAUST). We thank Dr. Huabing Shu and Mr. Ziang Zhang for assistance with PYTHON programming.

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