Material Science
Photosensor
62%
Aluminum Nitride
62%
Nitride Compound
50%
Quantum Well
50%
Epitaxy
37%
Oxide Compound
31%
Thin Films
31%
Indium
25%
Thin-Film Transistor
25%
Transistor
25%
Superlattice
25%
Gallium Nitride
25%
High Power Electronics
25%
Epitaxial Layer
25%
Electrical Resistivity
25%
Density
20%
Film
18%
Band Offset
18%
Annealing
16%
Tape
12%
Covalent Modification
12%
Sapphire
12%
Electronic Structure
12%
Crystalline Material
12%
Schottky Barrier
12%
Thermal Expansion
12%
Engineering
Light-Emitting Diode
100%
Ultraviolet Light
50%
Nitride
50%
Strain
50%
Quantum Well
32%
Thin Films
31%
Photodetector
31%
Quantum Barrier
27%
Superlattice
25%
Layer Design
25%
Thin-Film Transistor
25%
Red Light
25%
Internal Quantum Efficiency
21%
Heterojunctions
20%
Fits and Tolerances
12%
Epitaxial Layer
12%
Responsivity
12%
Demonstrates
12%
Efficiency Droop
11%
Plug Efficiency
10%
Keyphrases
Fabrication Technology
25%
Band Engineering
25%
Performance Enhancement
25%
Engineering Technology
25%
Last Quantum Barrier
25%
Machine Algorithm
25%
Light-emitting Diodes
25%
Vertical Electronics
25%
III-nitrides
25%
Vertical Photodetector
25%
Flexible Mica
16%
Tri-gate
16%
In2O3 TFT
12%
Device Performance
12%