Research output per year
Research output per year
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Dive into the research topics where Pavel Kirilenko is active. These topic labels come from the works of this person. Together they form a unique fingerprint.
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Collaborations and top research areas from the last five years
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Research output
- 13 Article
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High crystallinity N-polar InGaN layers grown on cleaved ScAlMgO4substrates
Kirilenko, P., Najmi, M. A., Ma, B., Shushanian, A., Velazquez-Rizo, M., Iida, D. & Ohkawa, K., Apr 1 2023, In: AIP ADVANCES. 13, 4, 045011.Research output: Contribution to journal › Article › peer-review
Open Access3 Scopus citations -
Investigation of N-polar InGaN growth on misoriented ScAlMgO4 substrates
Najmi, M. A., Kirilenko, P., Iida, D. & Ohkawa, K., Dec 2023, In: Scientific Reports. 13, 1, 19332.Research output: Contribution to journal › Article › peer-review
Open Access -
Demonstration of 621-nm-wavelength InGaN-based single-quantum-well LEDs with an external quantum efficiency of 4.3% at 10.1 A/cm2
Iida, D., Kirilenko, P., Velazquez-Rizo, M., Zhuang, Z., Najmi, M. A. & Ohkawa, K., Jun 1 2022, In: AIP ADVANCES. 12, 6, 065125.Research output: Contribution to journal › Article › peer-review
Open Access31 Scopus citations -
InGaN-based green micro-LED efficiency enhancement by hydrogen passivation of the p-GaN sidewall
Kirilenko, P., Iida, D., Zhuang, Z. & Ohkawa, K., Jul 25 2022, In: Applied Physics Express. 15, 8, p. 084003Research output: Contribution to journal › Article › peer-review
21 Scopus citations -
Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate
Velazquez-Rizo, M., Najmi, M. A., Iida, D., Kirilenko, P. & Ohkawa, K., Jun 2022, In: APPLIED PHYSICS EXPRESS. 15, 6, 065501.Research output: Contribution to journal › Article › peer-review
Open Access14 Scopus citations -
Passivation of Surface States in GaN by NiO Particles
Velazquez-Rizo, M., Kirilenko, P., Iida, D., Zhuang, Z. & Ohkawa, K., Feb 2022, In: Crystals. 12, 2, 211.Research output: Contribution to journal › Article › peer-review
Open Access2 Scopus citations -
Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation
Kirilenko, P., Altinkaya, C., Iida, D. & Ohkawa, K., Dec 2022, In: Crystals. 12, 12, 1733.Research output: Contribution to journal › Article › peer-review
Open Access1 Scopus citations -
Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays
Zhuang, Z., Iida, D., Kirilenko, P. & Ohkawa, K., Aug 24 2021, In: Optics Express.Research output: Contribution to journal › Article › peer-review
14 Scopus citations
Press/Media
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Researchers at King Abdullah University of Science and Technology (KAUST) Have Reported New Data on Electronics (High-performance and Temperature-stable Ingan Single-quantum-well Red Light-emitting Diodes Via Selective Hydrogen Passivation)
Ohkawa, K., Iida, D., Kirilenko, P. & Altinkaya, C.
05/20/24
1 item of Media coverage
Press/Media: Press / Media
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Recent Findings in Hydrogen Described by Researchers from King Abdullah University of Science and Technology (KAUST) (Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation)
Ohkawa, K., Iida, D., Kirilenko, P. & Altinkaya, C.
01/5/23
1 item of Media coverage
Press/Media: Press / Media