Keyphrases
Indium Gallium Nitride (InGaN)
100%
ScAlMgO4
53%
Nitrogen-polar (N-polar)
40%
GaN Layers
29%
Red Light-emitting Diode
26%
Light-emitting Diodes
26%
External Quantum Efficiency
26%
InGaN Layer
21%
Residual Stress
20%
Single Quantum Well
20%
Phonon Transport
20%
Crystal Defects
20%
Raman Imaging
20%
Laser System
20%
Directly Grown
20%
Heterointerface
20%
Microstructural Analysis
20%
Misoriented
20%
Indium Gallium Nitride (InGaN)
20%
Multiple Quantum Wells
20%
Strain Engineering
20%
Crystal Quality
15%
N-GaN
13%
Hexagonal Hillock
10%
Full Width at Half Maximum
10%
In-plane Stress
10%
Light Output
10%
Engineering
Light-Emitting Diode
40%
Crystalline Quality
33%
Low-Temperature
30%
Buffer Layer
30%
External Quantum Efficiency
26%
Transmissions
26%
Red Light
25%
Defects
23%
Laser System
20%
Quantum Well
20%
Optical Efficiency
20%
Residual Stress
20%
Pulsed Laser
20%
Crystallinity
20%
Nanowires
20%
Differential Phase
20%
Tensiles
20%
Phase Contrast
20%
Dislocation Density
10%
Plane Stress
10%
Threading Dislocation
10%
Material Science
Scanning Transmission Electron Microscopy
25%
Pulsed Laser Deposition
20%
Vapor Phase Epitaxy
20%
Microstructural Analysis
20%
Nanowires
20%
Crystal Defect
20%
Buffer Layer
20%
Quantum Well
20%
