Material Science
Aluminum Nitride
100%
Light-Emitting Diode
57%
Film
48%
Silicon
46%
Thin Films
32%
Sapphire
32%
Schottky Barrier
31%
Boron
28%
Epitaxy
23%
Hastelloy
21%
Buffer Layer
19%
Quantum Well
19%
Photosensor
19%
Heterojunction
18%
Transistor
15%
MXene
14%
Monolayers
14%
Superlattice
14%
Gallium Nitride
14%
Electrical Resistivity
14%
Lithography
14%
Aluminum Oxide
14%
Solution (Chemistry)
14%
Thin-Film Transistor
14%
Silver
14%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Annealing
11%
Cerium Oxide
10%
Engineering
Nitride
60%
Light-Emitting Diode
42%
Ultraviolet Light
28%
Quantum Well
24%
Crystal Quality
20%
Side Wall
20%
Schottky Barrier Diode
18%
Buffer Layer
17%
Sapphire Substrate
17%
Superlattice
14%
Photodetector
14%
Heterostructures
14%
Layer Design
14%
Self-Powered
14%
Responsivity
14%
Strain
14%
Red Light
14%
Source Data
14%
Thermal Oxidation
14%
UV Nanoimprint Lithography
14%
Two Dimensional
14%
Light Source
14%
Metal-Oxide-Semiconductor Field-Effect Transistor
14%
Rapid Thermal Annealing
14%
Emission Intensity
10%
Keyphrases
Micro-LEDs Fabrication
17%
Schottky Barrier Diode
17%
Nitrides
16%
High Efficiency
16%
GaN MOS-HEMTs
14%
Gate Leakage
14%
Advanced Technologies
14%
Silicon(111)
14%
Boron
14%
Graphdiyne
14%
Machine Algorithm
14%
Nanopatterning
14%
Epitaxial AlN
14%
Breakdown Voltage
14%
Source Data
14%
Etching-free
14%
Atomic Layer Etching
14%
Water Transport
14%
Sidewall Effect
14%
Indium Gallium Nitride (InGaN)
14%
Hastelloy
14%
Micro-light-emitting Diodes (micro-LEDs)
14%
Aluminum Nitride Thin Film
14%
Doped Aluminum Nitride
14%
Buffer Layer
14%
Multi-broadband
14%
Space-confined Synthesis
14%
Crack-free
14%
Flexible Thin-film Transistor
14%
Metal-organic Chemical Vapor Deposition (MOCVD)
14%
Two Dimensional
14%
Highly Selective
14%