KAUST integrates 2D h-BN on 180nm CMOS to create high-speed, low-energy-consumption memristors

Press/Media: Press / Media

Period	Apr 11 2023

Media coverage

Title	KAUST integrates 2D h-BN on 180nm CMOS to create high-speed, low-energy-consumption memristors
Media name/outlet	Semiconductor Today
Country/Territory	United Kingdom
Date	04/11/23
URL	ct.moreover.com/?a=50485626320&p=1gw&v=1&x=WE3QqKfUkFJrx9a5RYwpFQ
Persons	Mario Lanza