Skip to main navigation
Skip to search
Skip to main content
KAUST PORTAL FOR RESEARCHERS AND STUDENTS Home
Home
Profiles
Research units
Research output
Press/Media
Prizes
Courses
Equipment
Student theses
Datasets
Search by expertise, name or affiliation
Boron enables AlN on silicon growth without cracks
Mingtao Nong
Computer, Electrical and Mathematical Sciences and Engineering
Press/Media
:
Press / Media
Period
Nov 14 2024
Related content
Research output
Toward crack-free AlN growth on silicon (111) by introducing boron incorporated buffer layer via MOCVD
Research output
:
Contribution to journal
›
Article
›
peer-review